SINO Plasma 2000 CVD
Time：2020/09/07 10:44:32
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PRODUCT INTRODUCTION SINO-Plasma 2000 is a multi-chamber CVD system independently developed by AMTE. It can be configured with three chambers. It adopts open transmission platform and dual wafer reaction chamber design, and is equipped with high-precision transmission mechanical arm. The operation interface based on Windows platform is simple to integrate system and easy to operate. The equipment has the advantages of small space occupation, high productivity efficiency, low cost of consumables (COC) and operating cost (COO). It is compatible with various CVD processes of gas and liquid sources. APPLICATIONS · 6-8 inch silicon based semiconductor production line · 4-6 inch SiC, GaN and GaAs production lines with CVD process. ADVANTAGES · Three dual wafer reaction chambers are configured to achieve high productivity · High density plasma, high compatibility of various processes · Compatible with PETEOS, PESIN, BPSG and other processes · Low consumption and low maintenance cost of reaction chamber and parts. . Compatible with low temperature process TECHNICAL PARAMETERS Equipment Availability / Uptime: ≥92 Deposition rate: Customized according to different processes Deposition uniformity: <1. 5% (1 sigma ) Heater Temperature Control: ±2°C of setpoint |
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